System for verifying non-volatile storage using different voltages

ABSTRACT

When performing a data sensing operation, including a verify operation during programming of non-volatile storage elements (or, in some cases, during a read operation after programming), a first voltage is used for unselected word lines that have been subjected to a programming operation and a second voltage is used for unselected word lines that have not been subjected to a programming operation. In some embodiments, the second voltage is lower than the first voltage.

This application is a continuation of U.S. patent application Ser. No.12/203,544, “System for Verifying Non-volatile Storage Using DifferentVoltages,” filed on Sep. 3, 2008, which is a divisional of U.S. patentapplication Ser. No. 11/421,682, “System For Verifying Non-VolatileStorage Using Different Voltages,” filed on Jun. 1, 2006, incorporatedherein by reference.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to U.S. patent application Ser. No.11/421,667, entitled “Verify Operation for Non-Volatile Storage UsingDifferent Voltages,” by Gerrit Jan Hemink, filed Jun. 1, 2006.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to technology for non-volatile memory.

2. Description of the Related Art

Semiconductor memory has become more popular for use in variouselectronic devices. For example, non-volatile semiconductor memory isused in cellular telephones, digital cameras, personal digitalassistants, mobile computing devices, non-mobile computing devices andother devices. Electrical Erasable Programmable Read Only Memory(EEPROM) and flash memory are among the most popular non-volatilesemiconductor memories.

Both EEPROM and flash memory utilize a floating gate that is positionedabove and insulated from a channel region in a semiconductor substrate.The floating gate is positioned between the source and drain regions. Acontrol gate is provided over and insulated from the floating gate. Thethreshold voltage of the transistor is controlled by the amount ofcharge that is retained on the floating gate. That is, the minimumamount of voltage that must be applied to the control gate before thetransistor is turned on to permit conduction between its source anddrain is controlled by the level of charge on the floating gate.

When programming an EEPROM or flash memory device, such as a NAND flashmemory device, typically a program voltage is applied to the controlgate and the bit line is grounded. Electrons from the channel areinjected into the floating gate. When electrons accumulate in thefloating gate, the floating gate becomes negatively charged and thethreshold voltage of the memory cell is raised so that the memory cellis in a programmed state. More information about programming can befound in U.S. Pat. No. 6,859,397, titled “Source Side Self BoostingTechnique for Non-Volatile Memory;” U.S. Pat. No. 6,917,542, titled“Detecting Over Programmed Memory;” and U.S. Pat. No. 6,888,758, titled“Programming Non-Volatile Memory,” all three cited patents areincorporated herein by reference in their entirety.

In many cases, the program voltage is applied to the control gate as aseries of pulses (referred to as programming pulses), with the magnitudeof the pulses increasing at each pulse. Between programming pulses, aset of one or more verify operations are performed to determined whetherthe memory cell(s) being programmed have reached their target level. Ifa memory cell has reached its target level, programming stops for thatmemory cell. If a memory cell has not reached its target level,programming will continue for that memory cell.

One example of a flash memory system uses the NAND structure, whichincludes arranging multiple transistors in series between two selectgates. The transistors in series and the select gates are referred to asa NAND string.

In a typical NAND flash memory device, memory cells are programmed in acertain order wherein the memory cells on the word line that is next tothe source side select gate are programmed first. Subsequently, thememory cells on the adjacent word line are programmed, followed by theprogramming of memory cells on the next adjacent word line, and so on,until the memory cells on the last word line next to the drain sideselect gate are programmed.

As more memory cells in a NAND string are programmed, the conductivityof the channel areas under the unselected word lines will decreasebecause programmed memory cells have a higher threshold voltage thanmemory cells that are in the erased state. This increasing of channelresistance changes the IV characteristics of the memory cells. When aparticular memory cell was being programmed (and verified), all thememory cells on the word lines higher than the selected word line werestill in the erased state. Therefore, the channel area under those wordlines was conducting very well, resulting in a relatively high cellcurrent during the actual verify operation. However, after all memorycells of the NAND string have been programmed to their desired state,the conductivity of the channel area under those word lines usuallydecreases as most of the cells will be programmed to one of theprogrammed states (while a smaller number, on average 25%, will stay inthe erased state). As a result, the IV characteristics change since lesscurrent will flow than compared to previous verify operation performedduring programming. The lowered current causes an artificial shift ofthe threshold voltages for the memory cells, which can lead to errorswhen reading data. This effect is referred to as the back patterneffect.

SUMMARY OF THE INVENTION

Technology is described herein for reducing errors from the back patterneffect. When performing a data sensing operation, including a verifyoperation during programming of non-volatile storage elements (or, insome cases, during a read operation after programming), a first voltageis used for unselected word lines that have been subjected to aprogramming operation and a second voltage is used for unselected wordlines that have not been subjected to a programming operation.

One embodiment includes applying a particular voltage to a particularnon-volatile storage element of a group of connected non-volatilestorage elements, applying a first voltage to one or more non-volatilestorage elements of the group that have already been subjected to one ormore programming process since a last relevant erase, applying a secondvoltage to two or more non-volatile storage elements of the group thathave not been subjected to a programming process since a last relevanterase, and sensing a condition related to the particular non-volatilestorage element in response to the applying of the particular voltage.The first voltage and second voltage are applied while applying theparticular voltage.

One embodiment includes applying a particular voltage to a particularnon-volatile storage element of a group of connected non-volatilestorage elements, applying a first voltage to one or more non-volatilestorage elements of the group that are on a source side of theparticular non-volatile storage element, applying a second voltage totwo or more non-volatile storage elements of the group that are on adrain side of the particular non-volatile storage element, and sensing acondition related to the particular non-volatile storage element and theparticular voltage. The first voltage and the second are applied inassociation with applying the particular voltage.

One embodiment includes applying a particular voltage to a particularnon-volatile storage element of a group of connected non-volatilestorage elements, applying a first voltage to one or more non-volatilestorage elements of the group that have already been subjected to one ormore programming processes since a last relevant erase, applying asecond voltage to one or more non-volatile storage elements of the groupthat have not already been subjected to a programming processes since alast relevant erase, applying a third voltage to a non-volatile storageelement that is a neighbor of the particular non-volatile storageelement, and sensing a condition related to the particular non-volatilestorage element and the particular voltage. The first voltage, secondvoltage and third voltage are applied in coordination with theparticular voltage.

One embodiment includes applying a particular voltage to a particularnon-volatile storage element of a group of connected non-volatilestorage elements, applying a first voltage to one or more non-volatilestorage elements of the group that are on a source side of theparticular non-volatile storage element, applying a second voltage to afirst set of one or more non-volatile storage elements of the group thatare on a drain side of the particular non-volatile storage element,applying the first voltage to a second set of one or more non-volatilestorage elements of the group that are on the drain side of theparticular non-volatile storage element, and sensing a condition relatedto the particular non-volatile storage element as part of a readoperation that includes the applying of the first voltage and the secondvoltage.

One example implementation comprises a plurality of non-volatile storageelements and a managing circuit in communication with the plurality ofnon-volatile storage elements for performing the processes discussedherein.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a NAND string.

FIG. 2 is an equivalent circuit diagram of the NAND string.

FIG. 3 is a cross-sectional view of the NAND string.

FIG. 4 is a block diagram of a portion of an array of NAND flash memorycells.

FIG. 5 is a block diagram of a non-volatile memory system.

FIG. 6 is a block diagram of a non-volatile memory system.

FIG. 7 is a block diagram depicting one embodiment of the sense block.

FIG. 7A is a block diagram of a memory array.

FIG. 8 is a flow chart describing one embodiment of a process forprogramming non-volatile memory.

FIG. 9 is an example wave form applied to the control gates ofnon-volatile memory cells.

FIG. 10 is a timing diagram that explains the behavior of certainsignals during read/verify operations.

FIG. 10A depicts a NAND string and a set of voltages applied to the NANDstring during a verify operation.

FIG. 10B depicts a NAND string and a set of voltages applied to the NANDstring during a read operation.

FIG. 10C is a flow chart describing one embodiment of a process forprogramming and reading.

FIG. 11 depicts an example set of threshold voltage distributions.

FIG. 12 depicts an example set of threshold voltage distributions.

FIGS. 13A-C show various threshold voltage distributions and describe aprocess for programming non-volatile memory.

FIG. 14 is a table depicting the order of programming non-volatilememory in one embodiment.

FIG. 15 depicts a NAND string and a set of voltages applied to the NANDstring during a verify process.

FIG. 16A depicts a NAND string and a set of voltages applied to the NANDstring during a verify process.

FIG. 16B depicts a NAND string and a set of voltages applied to the NANDstring during a read process.

FIG. 16C depicts a NAND string and a set of voltages applied to the NANDstring during a read process.

DETAILED DESCRIPTION

One example of a memory system suitable for implementing the presentinvention uses the NAND flash memory structure, which includes arrangingmultiple transistors in series between two select gates. The transistorsin series and the select gates are referred to as a NAND string. FIG. 1is a top view showing one NAND string. FIG. 2 is an equivalent circuitthereof. The NAND string depicted in FIGS. 1 and 2 includes fourtransistors, 100, 102, 104 and 106, in series and sandwiched between afirst select gate 120 and a second select gate 122. Select gate 120gates the NAND string connection to bit line 126. Select gate 122 gatesthe NAND string connection to source line 128. Select gate 120 iscontrolled by applying the appropriate voltages to control gate 120CG.Select gate 122 is controlled by applying the appropriate voltages tocontrol gate 122CG. Each of the transistors 100, 102, 104 and 106 has acontrol gate and a floating gate. Transistor 100 has control gate 100CGand floating gate 100FG. Transistor 102 includes control gate 102CG andfloating gate 102FG. Transistor 104 includes control gate 104CG andfloating gate 104FG. Transistor 106 includes a control gate 106CG andfloating gate 106FG. Control gate 100CG is connected to (or is) wordline WL3, control gate 102CG is connected to word line WL2, control gate104CG is connected to word line WL1, and control gate 106CG is connectedto word line WL0. In one embodiment, transistors 100, 102, 104 and 106are each memory cells. In other embodiments, the memory cells mayinclude multiple transistors or may be different than that depicted inFIGS. 1 and 2. Select gate 120 is connected to select line SGD. Selectgate 122 is connected to select line SGS.

FIG. 3 provides a cross-sectional view of the NAND string describedabove. As depicted in FIG. 3, the transistors of the NAND string areformed in p-well region 140. Each transistor includes a stacked gatestructure that consists of a control gate (100CG, 102CG, 104CG and106CG) and a floating gate (100FG, 102FG, 104FG and 106FG). The controlgates and the floating gates are typically formed by depositingpoly-silicon layers. The floating gates are formed on the surface of thep-well on top of an oxide or other dielectric film. The control gate isabove the floating gate, with an inter-polysilicon dielectric layerseparating the control gate and floating gate. The control gates of thememory cells (100, 102, 104 and 106) form the word lines. N+ dopeddiffusion regions 130, 132, 134, 136 and 138 are shared betweenneighboring cells, through which the cells are connected to one anotherin series to form a NAND string. These N+ doped regions form the sourceand drain of each of the cells. For example, N+ doped region 130 servesas the drain of transistor 122 and the source for transistor 106, N+doped region 132 serves as the drain for transistor 106 and the sourcefor transistor 104, N+ doped region 134 serves as the drain fortransistor 104 and the source for transistor 102, N+ doped region 136serves as the drain for transistor 102 and the source for transistor100, and N+ doped region 138 serves as the drain for transistor 100 andthe source for transistor 120. N+ doped region 126 connects to the bitline for the NAND string, while N+ doped region 128 connects to a commonsource line for multiple NAND strings.

Note that although FIGS. 1-3 show four memory cells in the NAND string,the use of four transistors is provided only as an example. A NANDstring used with the technology described herein can have less than fourmemory cells or more than four memory cells. For example, some NANDstrings will include 8 memory cells, 16 memory cells, 32 memory cells,64 memory cells, etc. The discussion herein is not limited to anyparticular number of memory cells in a NAND string.

Each memory cell can store data represented in analog or digital form.When storing one bit of digital data, the range of possible thresholdvoltages of the memory cell is divided into two ranges, which areassigned logical data “1” and “0.” In one example of a NAND-type flashmemory, the voltage threshold is negative after the memory cell iserased, and defined as logic “1.” The threshold voltage is positiveafter a program operation, and defined as logic “0.” When the thresholdvoltage is negative and a read is attempted by applying 0 volts to thecontrol gate, the memory cell will turn on to indicate logic one isbeing stored. When the threshold voltage is positive and a readoperation is attempted by applying 0 volts to the control gate, thememory cell will not turn on, which indicates that logic zero is stored.A memory cell storing one bit of digital data is referred to as a binarymemory cell.

A memory cell can also store multiple bits of digital data. Such amemory cell is referred to as a multi-state memory cell. The thresholdvoltage window for a multi-state memory cell is divided into a number ofstates. For example, if four states are used, there will be fourthreshold voltage ranges assigned to the data values “11,” “10,” “01,”and “00.” In one example of a NAND-type memory, the threshold voltageafter an erase operation is negative and defined as “11.” Positivethreshold voltages are used for the states of “10,” “01,” and “00.”

Relevant examples of NAND-type flash memories and their operation areprovided in the following U.S. patents/patent applications, all of whichare incorporated herein by reference in their entirety: U.S. Pat. No.5,570,315; U.S. Pat. No. 5,774,397; U.S. Pat. No. 6,046,935; U.S. Pat.No. 5,386,422; U.S. Pat. No. 6,456,528; and U.S. patent application Ser.No. 09/893,277 (Publication No. US2003/0002348). Other types ofnon-volatile memory in addition to NAND flash memory can also be usedwith the present invention. For example, a so called TANOS structure(consisting of a stacked layer of TaN—Al₂O₃—SiN—SiO₂ on a siliconsubstrate), which is basically a memory cell using trapping of charge ina nitride layer (instead of a floating gate), can also be used with thepresent invention.

Another type of memory cell useful in flash EEPROM systems utilizes anon-conductive dielectric material in place of a conductive floatinggate to store charge in a non-volatile manner. Such a cell is describedin an article by Chan et al., “A True Single-TransistorOxide-Nitride-Oxide EEPROM Device,” IEEE Electron Device Letters, Vol.EDL-8, No. 3, March 1987, pp. 93-95. A triple layer dielectric formed ofsilicon oxide, silicon nitride and silicon oxide (“ONO”) is sandwichedbetween a conductive control gate and a surface of a semi-conductivesubstrate above the memory cell channel. The cell is programmed byinjecting electrons from the cell channel into the nitride, where theyare trapped and stored in a limited region. This stored charge thenchanges the threshold voltage of a portion of the channel of the cell ina manner that is detectable. The cell is erased by injecting hot holesinto the nitride. See also Nozaki et al., “A 1-Mb EEPROM with MONOSMemory Cell for Semiconductor Disk Application,” IEEE Journal ofSolid-State Circuits, Vol. 26, No. 4, April 1991, pp. 497-501, whichdescribes a similar cell in a split-gate configuration where a dopedpolysilicon gate extends over a portion of the memory cell channel toform a separate select transistor. The foregoing two articles areincorporated herein by reference in their entirety. The programmingtechniques mentioned in section 1.2 of “Nonvolatile Semiconductor MemoryTechnology,” edited by William D. Brown and Joe E. Brewer, IEEE Press,1998, incorporated herein by reference, are also described in thatsection to be applicable to dielectric charge-trapping devices.

FIG. 4 illustrates an example of an array of NAND cells, such as thoseshown in FIGS. 1-3. Along each column, a bit line 206 is coupled to thedrain terminal 126 of the drain select gate for the NAND string 150.Along each row of NAND strings, a source line 204 may connect all thesource terminals 128 of the source select gates of the NAND strings. Anexample of a NAND architecture array and its operation as part of amemory system is found in U.S. Pat. Nos. 5,570,315; 5,774,397; and6,046,935.

The array of memory cells is divided into a large number of blocks ofmemory cells. As is common for flash EEPROM systems, the block is theunit of erase. That is, each block contains the minimum number of memorycells that are erased together. Each block is typically divided into anumber of pages. A page is a unit of programming. In one embodiment, theindividual pages may be divided into segments and the segments maycontain the fewest number of cells that are written at one time as abasic programming operation. One or more pages of data are typicallystored in one row of memory cells. A page can store one or more sectors.A sector includes user data and overhead data. Overhead data typicallyincludes an Error Correction Code (ECC) that has been calculated fromthe user data of the sector. A portion of the controller (describedbelow) calculates the ECC when data is being programmed into the array,and also checks it when data is being read from the array.Alternatively, the ECCs and/or other overhead data are stored indifferent pages, or even different blocks, than the user data to whichthey pertain. A sector of user data is typically 512 bytes,corresponding to the size of a sector in magnetic disk drives. Overheaddata is typically an additional 16-20 bytes. A large number of pagesform a block, anywhere from 8 pages, for example, up to 32, 64, 128 ormore pages.

FIG. 5 illustrates a memory device 296 having read/write circuits forreading and programming a page of memory cells in parallel, according toone embodiment of the present invention. Memory device 296 may includeone or more memory die 298. Memory die 298 includes a two-dimensionalarray of memory cells 300, control circuitry 310, and read/writecircuits 365. In some embodiments, the array of memory cells can bethree dimensional. The memory array 300 is addressable by word lines viaa row decoder 330 and by bit lines via a column decoder 360. Theread/write circuits 365 include multiple sense blocks 400 and allow apage of memory cells to be read or programmed in parallel. Typically acontroller 350 is included in the same memory device 296 (e.g., aremovable storage card) as the one or more memory die 298. Commands andData are transferred between the host and controller 350 via lines 320and between the controller and the one or more memory die 298 via lines318.

The control circuitry 310 cooperates with the read/write circuits 365 toperform memory operations on the memory array 300. The control circuitry310 includes a state machine 312, an on-chip address decoder 314 and apower control module 316. The state machine 312 provides chip-levelcontrol of memory operations. The on-chip address decoder 314 providesan address interface between that used by the host or a memorycontroller to the hardware address used by the decoders 330 and 360. Thepower control module 316 controls the power and voltages supplied to theword lines and bit lines during memory operations.

In some implementations, some of the components of FIG. 5 can becombined. In various designs, one or more of the components of FIG. 5(alone or in combination), other than memory cell array 300, can bethought of as a managing circuit. For example, a managing circuit mayinclude any one of or a combination of control circuitry 310, statemachine 312, decoders 314/360, power control 316, sense blocks 400,read/write circuits 365, controller 350, etc.

FIG. 6 illustrates another arrangement of the memory device 296 shown inFIG. 5. Access to the memory array 300 by the various peripheralcircuits is implemented in a symmetric fashion, on opposite sides of thearray, so that the densities of access lines and circuitry on each sideare reduced by half. Thus, the row decoder is split into row decoders330A and 330B and the column decoder into column decoders 360A and 360B.Similarly, the read/write circuits are split into read/write circuits365A connecting to bit lines from the bottom and read/write circuits365B connecting to bit lines from the top of the array 300. In this way,the density of the read/write modules is essentially reduced by onehalf. The device of FIG. 6 can also include a controller, as describedabove for the device of FIG. 5.

FIG. 7 is a block diagram of an individual sense block 400 partitionedinto a core portion, referred to as a sense module 380, and a commonportion 390. In one embodiment, there will be a separate sense module380 for each bit line and one common portion 390 for a set of multiplesense modules 380. In one example, a sense block will include one commonportion 390 and eight sense modules 380. Each of the sense modules in agroup will communicate with the associated common portion via a data bus372. For further details, refer to U.S. patent application Ser. No.11/026,536 “Non-Volatile Memory & Method with Shared Processing for anAggregate of Sense Amplifiers” filed on Dec. 29, 2004, which isincorporated herein by reference in its entirety.

Sense module 380 comprises sense circuitry 370 that determines whether aconduction current in a connected bit line is above or below apredetermined threshold level. Sense module 380 also includes a bit linelatch 382 that is used to set a voltage condition on the connected bitline. For example, a predetermined state latched in bit line latch 382will result in the connected bit line being pulled to a statedesignating program inhibit (e.g., Vdd).

Common portion 390 comprises a processor 392, a set of data latches 394and an I/O Interface 396 coupled between the set of data latches 394 anddata bus 320. Processor 392 performs computations. For example, one ofits functions is to determine the data stored in the sensed memory celland store the determined data in the set of data latches. The set ofdata latches 394 is used to store data bits determined by processor 392during a read operation. It is also used to store data bits importedfrom the data bus 320 during a program operation. The imported data bitsrepresent write data meant to be programmed into the memory. I/Ointerface 396 provides an interface between data latches 394 and thedata bus 320.

During read or sensing, the operation of the system is under the controlof state machine 312 that controls the supply of different control gatevoltages to the addressed cell. As it steps through the variouspredefined control gate voltages corresponding to the various memorystates supported by the memory, the sense module 380 may trip at one ofthese voltages and an output will be provided from sense module 380 toprocessor 392 via bus 372. At that point, processor 392 determines theresultant memory state by consideration of the tripping event(s) of thesense module and the information about the applied control gate voltagefrom the state machine via input lines 393. It then computes a binaryencoding for the memory state and stores the resultant data bits intodata latches 394. In another embodiment of the core portion, bit linelatch 382 serves double duty, both as a latch for latching the output ofthe sense module 380 and also as a bit line latch as described above.

It is anticipated that some implementations will include multipleprocessors 392. In one embodiment, each processor 392 will include anoutput line (not depicted in FIG. 7) such that each of the output linesis wired-OR'd together. In some embodiments, the output lines areinverted prior to being connected to the wired-OR line. Thisconfiguration enables a quick determination during the programverification process of when the programming process has completedbecause the state machine receiving the wired-OR can determine when allbits being programmed have reached the desired level. For example, wheneach bit has reached its desired level, a logic zero for that bit willbe sent to the wired-OR line (or a data one is inverted). When all bitsoutput a data 0 (or a data one inverted), then the state machine knowsto terminate the programming process. In embodiments where eachprocessor communicates with eight sense modules, the state machine needsto read the wired-OR line eight times, or logic is added to processor392 to accumulate the results of the associated bit lines such that thestate machine need only read the wired-OR line one time.

During program or verify, the data to be programmed is stored in the setof data latches 394 from the data bus 320. The program operation, underthe control of the state machine, comprises a series of programmingvoltage pulses applied to the control gates of the addressed memorycells. Each programming pulse is followed by a verify operation todetermine if the memory cell has been programmed to the desired state.Processor 392 monitors the verified memory state relative to the desiredmemory state. When the two are in agreement, the processor 392 sets thebit line latch 382 so as to cause the bit line to be pulled to a statedesignating program inhibit. This inhibits the cell coupled to the bitline from further programming even if programming pulses appear on itscontrol gate. In other embodiments the processor initially loads the bitline latch 382 and the sense circuitry sets it to an inhibit valueduring the verify process.

Data latch stack 394 contains a stack of data latches corresponding tothe sense module. In one embodiment, there are three data latches persense module 380. In some implementations (but not required), the datalatches are implemented as a shift register so that the parallel datastored therein is converted to serial data for data bus 320, and viceversa. In the preferred embodiment, all the data latches correspondingto the read/write block of m memory cells can be linked together to forma block shift register so that a block of data can be input or output byserial transfer. In particular, the bank of r read/write modules isadapted so that each of its set of data latches will shift data in to orout of the data bus in sequence as if they are part of a shift registerfor the entire read/write block.

Additional information about the structure and/or operations of variousembodiments of non-volatile storage devices can be found in (1) UnitedStates Patent Application Pub. No. 2004/0057287, “Non-Volatile MemoryAnd Method With Reduced Source Line Bias Errors,” published on Mar. 25,2004; (2) United States Patent Application Pub No. 2004/0109357,“Non-Volatile Memory And Method with Improved Sensing,” published onJun. 10, 2004; (3) U.S. patent application Ser. No. 11/015,199 titled“Improved Memory Sensing Circuit And Method For Low Voltage Operation,”Inventor Raul-Adrian Cernea, filed on Dec. 16, 2004; (4) U.S. patentapplication Ser. No. 11/099,133, titled “Compensating for CouplingDuring Read Operations of Non-Volatile Memory,” Inventor Jian Chen,filed on Apr. 5, 2005; and (5) U.S. patent application Ser. No.11/321,953, titled “Reference Sense Amplifier For Non-Volatile Memory,Inventors Siu Lung Chan and Raul-Adrian Cernea, filed on Dec. 28, 2005.All five of the immediately above-listed patent documents areincorporated herein by reference in their entirety.

With reference to FIG. 7A, an exemplary structure of memory cell array302 is described. As one example, a NAND flash EEPROM is described thatis partitioned into 1,024 blocks. The data stored in each block can besimultaneously erased. In one embodiment, the block is the minimum unitof memory cells that are simultaneously erased. In each block, in thisexample, there are 8,512 columns corresponding to bit lines BL0, BL1, .. . BL8511. In one embodiment, all the bit lines of a block can besimultaneously selected during read and program operations. Memory cellsalong a common word line and connected to any bit line can be programmedat the same time.

In another embodiment, the bit lines are divided into even bit lines andodd bit lines. In an odd/even bit line architecture, memory cells alonga common word line and connected to the odd bit lines are programmed atone time, while memory cells along a common word line and connected toeven bit lines are programmed at another time.

FIG. 7A shows four memory cells connected in series to form a NANDstring. Although four cells are shown to be included in each NANDstring, more or less than four can be used (e.g., 16, 32, or anothernumber). One terminal of the NAND string is connected to a correspondingbit line via a drain select gate (connected to select gate drain lineSGD), and another terminal is connected to c-source via a source selectgate (connected to select gate source line SGS).

FIG. 8 is a flow chart describing one embodiment of a method forprogramming non-volatile memory. In one implementation, memory cells areerased (in blocks or other units) prior to programming. Memory cells areerased in one embodiment by raising the p-well to an erase voltage(e.g., 20 volts) for a sufficient period of time and grounding the wordlines of a selected block while the source and bit lines are floating.Due to capacitive coupling, the unselected word lines, bit lines, selectlines, and c-source are also raised to a significant fraction of theerase voltage. A strong electric field is thus applied to the tunneloxide layers of selected memory cells and the data of the selectedmemory cells are erased as electrons of the floating gates are emittedto the substrate side, typically by Fowler-Nordheim tunneling mechanism.As electrons are transferred from the floating gate to the p-wellregion, the threshold voltage of a selected cell is lowered. Erasing canbe performed on the entire memory array, separate blocks, or anotherunit of cells.

In step 401 of FIG. 8, a “data load” command is issued by the controllerand received by control circuitry 310. In step 402, address datadesignating the page address is input to decoder 314 from the controlleror host. In step 404, a page of program data for the addressed page isinput to a data buffer for programming. That data is latched in theappropriate set of latches. In step 406, a “program” command is issuedby the controller to state machine 312.

Triggered by the “program” command, the data latched in step 404 will beprogrammed into the selected memory cells controlled by state machine312 using the stepped pulses of FIG. 9 applied to the appropriate wordline. In step 408, the program voltage Vpgm is initialized to thestarting pulse (e.g., 12V or other value) and a program counter PCmaintained by state machine 312 is initialized at 0. In step 410, thefirst Vpgm pulse is applied to the selected word line. If logic “0” isstored in a particular data latch indicating that the correspondingmemory cell should be programmed, then the corresponding bit line isgrounded. On the other hand, if logic “1” is stored in the particularlatch indicating that the corresponding memory cell should remain in itscurrent data state, then the corresponding bit line is connected to Vddto inhibit programming.

In step 412, the states of the selected memory cells are verified usingdifferent voltage for the unselected word line, as discussed below. Ifit is detected that the target threshold voltage of a selected cell hasreached the appropriate level, then the data stored in the correspondingdata latch is changed to a logic “1.” If it is detected that thethreshold voltage has not reached the appropriate level, the data storedin the corresponding data latch is not changed. In this manner, a bitline having a logic “1” stored in its corresponding data latch does notneed to be programmed. When all of the data latches are storing logic“1,” the state machine (via the wired-OR type mechanism described above)knows that all selected cells have been programmed. In step 414, it ischecked whether all of the data latches are storing logic “1.” If so,the programming process is complete and successful because all selectedmemory cells were programmed and verified. A status of “PASS” isreported in step 416.

If, in step 414, it is determined that not all of the data latches arestoring logic “1,” then the programming process continues. In step 418,the program counter PC is checked against a program limit value PCMAX.One example of a program limit value is 20; however, other numbers canalso be used. If the program counter PC is not less than 20, then theprogram process has failed and a status of “FAIL” is reported in step420. In some embodiments, after the maximum number of loops is reached,the system checks whether less than a predetermined amount of cells havenot finished programming. If less than that predetermined number has notfinished programming, the programming process is still considered pass.If the program counter PC is less than 20, then the Vpgm level isincreased by the step size and the program counter PC is incremented instep 422. After step 422, the process loops back to step 410 to applythe next Vpgm pulse.

FIG. 9 shows a series of program pulses that are applied to the wordline selected for programming. In between program pulses are a set ofverify pulses (not depicted). In some embodiments, there can be a verifypulse for each state that data is being programmed into. In otherembodiments, there can be more or less verify pulses.

In one embodiment, data is programmed to memory cells along a commonword line. Thus, prior to applying the program pulses of FIG. 9, one ofthe word lines is selected for programming. This word line will bereferred to as the selected word line. The remaining word lines of ablock are referred to as the unselected word lines. The selected wordline may have one or two neighboring word lines. If the selected wordline has two neighboring word lines, then the neighboring word line onthe drain side is referred to as the drain side neighboring word lineand the neighboring word line on the source side is referred to as thesource side neighboring word line. For example, if WL2 of FIG. 7A is theselected word line, then WL1 is the source side neighboring word lineand WL3 is the drain side neighboring word line.

FIG. 10 is a timing diagram depicting the behavior of various signalsduring one iteration of a sensing operation that senses a condition ofone or more memory cells. Thus, the process depicted in FIG. 10 can beused to perform a verification operation or (with some modificationsdiscussed below) a read operation. For example, if the memory cells arebinary memory cells, the process of FIG. 10 may be performed once foreach memory cell during an iteration of step 412. If the memory cellsare multi-state memory cells with four states (e.g., E, A, B, and C),the process of FIG. 10 may be performed three times for each memory cellduring an iteration of step 412.

In general, during the read and verify operations, the selected wordline is connected to a voltage, a level of which is specified for eachread and verify operation in order to determine whether a thresholdvoltage of the concerned memory cell has reached such level. Afterapplying the word line voltage, the conduction current of the memorycell is measured to determine whether the memory cell turned on inresponse to the voltage applied to the word line. If the conductioncurrent is measured to be greater than a certain value, then it isassumed that the memory cell turned on and the voltage applied to theword line is greater than the threshold voltage of the memory cell. Ifthe conduction current is not measured to be greater than the certainvalue, then it is assumed that the memory cell did not turn on and thevoltage applied to the word line is not greater than the thresholdvoltage of the memory cell.

There are many ways to measure the conduction current of a memory cellduring a read or verify operation. In one example, the conductioncurrent of a memory cell is measured by the rate it discharges orcharges a dedicated capacitor in the sense amplifier. In anotherexample, the conduction current of the selected memory cell allows (orfails to allow) the NAND string that included the memory cell todischarge the corresponding bit line. The voltage on the bit line ismeasured after a period of time to see whether it has been discharged ornot.

FIG. 10 shows signals SGD, WL_unsel_D, WL_unsel_S, WLn, SGS, SelectedBL, and Source starting at Vss (approximately 0 volts). SGD representsthe signal provided to the gate of the drain side select gate. SGS isthe signal provided to the gate of the source side select gate. WLn isthe signal provided to the word line selected for reading/verification.WL_unsel_S is the signal provided to the unselected word lines that areon the source side of the selected word line WLn. For example, if theselected word line is WL2, then WL_unsel_S is applied to WL0 and WL1.WL_unsel_D is the signal provided to the unselected word lines that areon the drain side of the selected word line WLn. For example, if theselected word line is WL1, then WL_unsel_D is applied to WL2 and WL3 ofFIG. 7A. Selected BL is the bit line selected for reading/verification.Source is the source line for the memory cells (see FIG. 7A). Note thatthere are two versions of SGS and Selected BL depicted in FIG. 10. Oneset of these signals SGS (B) and Selected BL (B) depict a read/verifyoperation for an array of memory cells that measure the conductioncurrent of a memory cell by determining whether the bit line hasdischarged. Another set of these signals SGS (C) and Selected BL (C)depict a read/verify operation for an array of memory cells that measurethe conduction current of a memory cell by the rate it discharges adedicated capacitor in the sense amplifier.

First, the behavior of the sensing circuits and the array of memorycells that are involved in measuring the conduction current of a memorycell during verification by determining whether the bit line hasdischarged will be discussed with respect to SGS (B) and Selected BL(B). At time t1 of FIG. 10, SGD is raised to Vsg (e.g., approximately4-4.5 volts), WL_unsel_S are raised to Vrd1 (e.g., approximately 4.5 to6 volts), WL_unsel_D are raised to Vrd2 (e.g., approximately 2-4 voltslower than Vrd1; however, in other embodiments other values for Vrd2 canbe used that are even lower than Vrd1, the selected word line WLn israised to Vcgv (e.g., Vva, Vvb, or Vvc of FIG. 11) for a verifyoperation. The selected bit line Selected BL(B) is pre-charged toapproximately 0.7 volts. The voltages Vrd1 and Vrd2 act as pass voltagesbecause they are sufficiently high to cause the unselected memory cellsto turn on and act as pass gates. At time t2, the source side selectgate is turned on by raising SGS (B) to Vsg. This provides a path todischarge the bit line. If the threshold voltage of the memory cellselected for reading is greater than Vcgv applied to the selected wordline WLn, then the selected memory cell will not turn on and the bitline will not be discharged, as depicted by signal line 450. If thethreshold voltage of the memory cell selected for reading is below Vcgvapplied to the selected word line WLn, then the memory cell selected forreading will turn on (conduct) and the bit line will be discharged, asdepicted by curve 452. At some point after time t2 and prior to time t3(as determined by the particular implementation), the sense amplifierwill determine whether the bit line has discharged to a sufficiently lowvoltage level. At time t3, the depicted signals will be lowered to Vss(or another value for standby or recovery). Note that in otherembodiments, the timing of some of the signals can be changed.

Next, the behavior of the sensing circuits and the array of memory cellsthat measure the conduction current of a memory cell during verificationby the rate it discharges or charges a dedicated capacitor in the senseamplifier will be discussed with respect to SGS (C) and Selected BL (C).At time t1 of FIG. 10, SGD is raised to Vsg (e.g., approximately 4-4.5volts), the unselected word lines WL_unsel_S are raised to Vrd1, theunselected word lines WL_unsel_D are raised to Vrd2, and the selectedword line WLn is raised to Vcgv (e.g., Vva, Vvb, or Vvc of FIG. 11). Inthis case, the sense amplifier holds the bit line voltage constantregardless of whether the selected NAND sting is conducting current ornot, so the sense amplifier measures the current flowing through theselected NAND string with the bit line “clamped” to that voltage. Atsome point after time t1 and prior to time t3 (as determined by theparticular implementation), the sense amplifier will determine whetherthe capacitor in the sense amplifier has been discharged or charged to asufficient amount. At time t3, the depicted signals will be lowered toVss (or another value for standby or recovery). Note that in otherembodiments, the timing of some of the signals can be changed.

A read operation is performed in the same manner as discussed above withrespect to FIG. 10, except that Vcgr (e.g., Vra, Vrb, or Vrc of FIG. 11)is applied to WLn and WL_unsel_D will typically receive Vrd1.

FIG. 10A depicts a NAND string and a set of voltages applied to the NANDstring during the verify operation depicted in FIG. 10. The NAND stringof FIG. 10A includes eight memory cells 464, 466, 468, 470, 472, 474,476 and 478. Each of those eight memory cells includes a floating gate(FG) and a control gate (CG). Between each of the floating gates aresource/drain regions 490. In some implementations, there is a P-typesubstrate (e.g., Silicon), an N-well within the substrate and a P-wellwithin the N-well (all of which are not depicted to make the drawingsmore readable). Note that the P-well may contain a so called channelimplantation that is usually a P-type implantation that determines orhelps to determine the threshold voltage and other characteristics ofthe memory cells. The source/drain regions 490 are N+ diffusion regionsthat are formed in the P-well. At one end of the NAND string is a drainside select gate 484. The drain select gate 484 connects the NAND stringto the corresponding bit line via bit line contact 494. At another endof the NAND string is a source select gate 482. Source select gate 482connects the NAND string to common source line 492.

During a verify operation, the selected memory cell 470 receives theverify compare voltage Vcgv. The unselected memory cells 464, 466 and468 on the source side of selected memory cell 470 receive Vrd1 at theircontrol gates. Memory cells 464, 466 and 468 have already been subjectedto one or more programming processes that potentially caused programmingof one or more pages of data stored in those memory cells since the lasttime that the NAND string of FIG. 10A was erased. The unselected memorycells 472, 474, 476 and 478 on the drain side of selected memory cell470 receive Vrd2 at their control gates. Memory cells 472, 474, 476 and478 have not been subjected to a programming process that potentiallycaused programming of one or more pages of data stored in those memorycells since the last time that the NAND string of FIG. 10A was erased.That is, at the time of performing a verification operation on memorycell 470, the unselected memory cells 464, 466 and 468 on the sourceside of selected memory cell 470 may be in states E, A, B, or C (seeFIGS. 11-13). On the other hand, memory cells 472, 474, 476 and 478 onthe drain side of selected memory cell 470 will be in the erased state E(see FIGS. 11-13).

Memory cells 464, 466 and 468 are referred to be as being on the sourceside of selected memory cell 470 because they are on the same NANDstring as selected memory cell 470 and on the same side of selectedmemory cell 470 as source side select gate 482. Although FIG. 10A showsthree memory cells on the source side, one or more memory cells can beon the source side. Memory cells 472, 474, 476 and 478 are referred tobe as being on the drain side of selected memory cell 470 because theyare on the same NAND string as selected memory cell 470 and on the sameside of selected memory cell 470 as drain side select gate 484. AlthoughFIG. 10A shows four memory cells on the drain side, one or more memorycells can be on the drain side; or two or more memory cells can be onthe drain side.

FIG. 10B depicts a NAND string and a set of voltages applied to the NANDstring during a read operation. During a read operation, the selectedmemory cell 470 receives the read compare voltage Vcgr. All of theunselected memory cells 464, 466, 468, 472, 474, and 476 receive Vreadat their control gates. In one embodiment Vread=Vrd1.

FIG. 10C is a flow chart describing one embodiment of a process forprogramming and reading. In many applications, all of the word lines fora block are programmed. Subsequent to that programming, all or a subsetof the data may be read one or more times. In some embodiments, the wordlines are programmed from the source side to the drain side. Forexample, in step 500, memory cells connected to a first word line (e.g.,WL0) are programmed. In step 502, memory cells connected to a secondword line (e.g., WL1) are programmed. In step 504, memory cellsconnected to a third word line are programmed. And so on, until memorycells connected to the last word line (e.g., the word line next to thedrain side select gate) are programmed in step 506. In otherembodiments, other orders of programming can also be used, includingorders of programming that do not proceed from the source side selectgate toward the drain side select gate. After all of the word lines areprogrammed, any one or more memory cells of the block associated withany of the word lines can be read. Consider the example of a digitalcamera that stores a set of pictures. It is likely that the pictureswill be stored across multiple blocks, thereby, programming all of theword lines prior to any read operations. Note that other order ofoperation different that as depicted in FIG. 10C can be implemented.

Each word line may be subjected to one or more programming process. Forexample, a word line may be associated with multiple pages of data. Eachprogramming process may be for a separate page of data. That is, theprocess of FIG. 8 may be performed separately for each page of data. Forexample, each of steps 500-506 may include multiple programmingprocesses. In other embodiments, all pages of data associated with aword line may be programmed together or a word line may only beassociated with one page of data.

At the end of a successful program (with verification) process, thethreshold voltages of the memory cells should be within one or moredistributions of threshold voltages for programmed memory cells orwithin a distribution of threshold voltages for erased memory cells, asappropriate. FIG. 11 illustrates example threshold voltage distributionsfor the memory cell array when each memory cell stores two bits of data.FIG. 11 shows a first threshold voltage distribution E for erased memorycells. Three threshold voltage distributions, A, B and C for programmedmemory cells, are also depicted. In one embodiment, the thresholdvoltages in the E distribution are negative and the threshold voltagesin the A, B and C distributions are positive.

Each distinct threshold voltage range of FIG. 11 corresponds topredetermined values for the set of data bits. The specific relationshipbetween the data programmed into the memory cell and the thresholdvoltage levels of the cell depends upon the data encoding scheme adoptedfor the cells. For example, U.S. Pat. No. 6,222,762 and U.S. PatentApplication Publication No. 2004/0255090, “Tracking Cells For A MemorySystem,” filed on Jun. 13, 2003, both of which are incorporated hereinby reference in their entirety, describe various data encoding schemesfor multi-state flash memory cells. In one embodiment, data values areassigned to the threshold voltage ranges using a Gray code assignment sothat if the threshold voltage of a floating gate erroneously shifts toits neighboring physical state, only one bit will be affected. Oneexample assigns “11” to threshold voltage range E (state E), “10” tothreshold voltage range A (state A), “00” to threshold voltage range B(state B) and “01” to threshold voltage range C (state C). However, inother embodiments, Gray code is not used. Although FIG. 11 shows fourstates, the present invention can also be used with other multi-statestructures including those that include more or less than four states.

FIG. 11 also shows three read reference voltages, Vra, Vrb and Vrc, forreading data from memory cells. By testing whether the threshold voltageof a given memory cell is above or below Vra, Vrb and Vrc, the systemcan determine what state the memory cell is in.

FIG. 11 also shows three verify reference voltages, Vva, Vvb and Vvc.When programming memory cells to state A, the system will test whetherthose memory cells have a threshold voltage greater than or equal toVva. When programming memory cells to state B, the system will testwhether the memory cells have threshold voltages greater than or equalto Vvb. When programming memory cells to state C, the system willdetermine whether memory cells have their threshold voltage greater thanor equal to Vvc.

In one embodiment, known as full sequence programming, memory cells canbe programmed from the erased state E directly to any of the programmedstates A, B or C. For example, a population of memory cells to beprogrammed may first be erased so that all memory cells in thepopulation are in erased state E. While some memory cells are beingprogrammed from state E to state A, other memory cells are beingprogrammed from state E to state B and/or from state E to state C.

FIG. 12 illustrates an example of a two-pass technique of programming amulti-state memory cell that stores data for two different pages: alower page and an upper page. Four states are depicted: state E (11),state A (10), state B (00) and state C (01). For state E, both pagesstore a “1.” For state A, the lower page stores a “0” and the upper pagestores a “1.” For state B, both pages store “0.” For state C, the lowerpage stores “1” and the upper page stores “0.” Note that althoughspecific bit patterns have been assigned to each of the states,different bit patterns may also be assigned.

In a first programming pass, the cell's threshold voltage level is setaccording to the bit to be programmed into the lower logical page. Ifthat bit is a logic “1,” the threshold voltage is not changed since itis in the appropriate state as a result of having been earlier erased.However, if the bit to be programmed is a logic “0,” the threshold levelof the cell is increased to be state A, as shown by arrow 530.

In a second programming pass, the cell's threshold voltage level is setaccording to the bit being programmed into the upper logical page. Ifthe upper logical page bit is to store a logic “1,” then no programmingoccurs since the cell is in one of the states E or A, depending upon theprogramming of the lower page bit, both of which carry an upper page bitof “1.” If the upper page bit is to be a logic “0,” then the thresholdvoltage is shifted. If the first pass resulted in the cell remaining inthe erased state E, then in the second phase the cell is programmed sothat the threshold voltage is increased to be within state C, asdepicted by arrow 534. If the cell had been programmed into state A as aresult of the first programming pass, then the memory cell is furtherprogrammed in the second pass so that the threshold voltage is increasedto be within state B, as depicted by arrow 532. The result of the secondpass is to program the cell into the state designated to store a logic“0” for the upper page without changing the data for the lower page.

In one embodiment, a system can be set up to perform full sequencewriting if enough data is written to fill up a word line. If not enoughdata is written, then the programming process can program the lower pagewith the data received. When subsequent data is received, the systemwill then program the upper page. In yet another embodiment, the systemcan start writing in the mode that programs the lower page and convertto full sequence programming mode if enough data is subsequentlyreceived to fill up an entire (or most of a) word line's memory cells.More details of such an embodiment are disclosed in U.S. patentapplication titled “Pipelined Programming of Non-Volatile Memories UsingEarly Data,” Ser. No. 11/013,125, filed on Dec. 14, 2004, inventorsSergy Anatolievich Gorobets and Yan Li, incorporated herein by referencein its entirety.

FIGS. 13A-C disclose another process for programming non-volatile memorythat reduces the effect of floating gate to floating gate coupling by,for any particular memory cell, writing to that particular memory cellwith respect to a particular page subsequent to writing to adjacentmemory cells for previous pages. In one example of an implementation ofthe process taught by FIGS. 13A-C, the non-volatile memory cells storetwo bits of data per memory cell, using four data states. For example,assume that state E is the erased state and states A, B and C are theprogrammed states. State E stores data 11. State A stores data 01. StateB stores data 10. State C stores data 00. This is an example of non-Graycoding because both bits change between adjacent states A & B. Otherencodings of data to physical data states can also be used. Each memorycell stores two pages of data. For reference purposes these pages ofdata will be called upper page and lower page; however, they can begiven other labels. With reference to state A for the process of FIGS.13A-C, the upper page stores bit 0 and the lower page stores bit 1. Withreference to state B, the upper page stores bit 1 and the lower pagestores bit 0. With reference to state C, both pages store bit data 0.

The programming process of FIGS. 13A-C is a two-step process. In thefirst step, the lower page is programmed. If the lower page is to remaindata 1, then the memory cell state remains at state E. If the data is tobe programmed to 0, then the threshold of voltage of the memory cell israised such that the memory cell is programmed to state B′. FIG. 13Atherefore shows the programming of memory cells from state E to stateB′. State B′ depicted in FIG. 13A is an interim state B; therefore, theverify point is depicted as Vvb′, which is lower than Vvb.

In one embodiment, after a memory cell is programmed from state E tostate B′, its neighbor memory cell (WLn+1) in the NAND string will thenbe programmed with respect to its lower page. For example, looking backat FIG. 7A, after the lower page for memory cell 600 is programmed, thelower page for memory cell 602 would be programmed. After programmingmemory cell 602, the floating gate to floating gate coupling effect willraise the apparent threshold voltage of memory cell 600 if memory cell600 had a threshold voltage raised from state E to state B′. This willhave the effect of widening the threshold voltage distribution for stateB′. This apparent widening of the threshold voltage distribution will beremedied when programming the upper page.

FIG. 13C depicts the process of programming the upper page. If thememory cell is in erased state E and the upper page is to remain at 1,then the memory cell will remain in state E. If the memory cell is instate E and its upper page data is to be programmed to 0, then thethreshold voltage of the memory cell will be raised so that the memorycell is in state A. If the memory cell was in intermediate thresholdvoltage distribution 550 and the upper page data is to remain at 1, thenthe memory cell will be programmed to final state B. If the memory cellis in intermediate threshold voltage distribution 550 and the upper pagedata is to become data 0, then the threshold voltage of the memory cellwill be raised so that the memory cell is in state C. The processdepicted by FIGS. 13A-C reduces the effect of floating gate to floatinggate coupling because only the upper page programming of neighbor memorycells will have an effect on the apparent threshold voltage of a givenmemory cell. An example of an alternate state coding is to move fromdistribution 550 to state C when the upper page data is a 1, and to moveto state B when the upper page data is a 0.

Although FIGS. 13A-C provide an example with respect to four data statesand two pages of data, the concepts taught by FIGS. 13A-C can be appliedto other implementations with more or less than four states anddifferent than two pages.

FIG. 14 is a table that describes one embodiment of the order forprogramming memory cells utilizing the programming method of FIGS.13A-C. For memory cells connected to word line WL0, the lower page formspage 0 and the upper page forms page 2. For memory cells connected toword line WL1, the lower page forms page 1 and the upper page forms page4. For memory cells connected to word line WL2, the lower page formspage 3 and the upper page forms page 6. For memory cells connected toword line WL3, the lower page forms page 5 and the upper page forms page7. Memory cells are programmed in numerical order according to pagenumber, from page 0 to page 7. In other embodiments, other orders ofprogramming can also be used, including orders of programming that donot proceed from the source side select gate toward the drain sideselect gate.

FIG. 15 shows the bias conditions for a selected NAND string during averify operation when programming according to the embodiment of FIGS.13A-C and FIG. 14. Selected memory cell 470 receives Vcgv at its controlgate. The unselected memory cells on the source side of selected memorycell 470 receive Vrd1 at their control gates. Memory cell 472, the drainside neighbor of selected memory cell 470, receives Vrd3. The otherunselected memory cells on the drain side of selected memory cell 470receive Vrd2 at their control gates. In one embodiment, Vrd2<Vrd3<Vrd1.In one example, Vrd3 is 1 volts less than Vrd1. In another embodiment,Vrd2<Vrd3≦Vrd1.

With respect to FIGS. 13-15, when the upper page on a selected word lineis being written, the word line next to the selected word line on thedrain side can already contain data that is in the intermediate state550. In that case, a word line voltage of Vrd2, will result in too lowof a conductivity of the channel area under that memory cell. As aresult, the current flowing through the NAND string during a verifyoperation can be too low and a proper verify operation may not takeplace. To avoid this, a voltage Vrd3 which is higher than Vrd2 should beapplied to that word line.

As described above with respect to FIG. 10C, word lines are typicallysubjected to programming from the source side to the drain side, and allword lines of a block are usually programmed before reading from any ofthe word lines. There are some exceptions depending on theimplementation, use and/or data. For example, it is possible to attemptto read data from a block prior to subjecting all of the word lines toprogramming processes. When not all word lines in a NAND string areprogrammed, the most accurate reading method is to apply the same biasto the unselected word lines as was done during the last verify step onthe last programmed word line in that NAND string.

FIGS. 16A-C contemplate the example when memory cells 464, 466, 468, 470and 472 have been programmed prior to any read operations, but memorycells 474, 476 and 478 have not been programmed. FIG. 16A shows the biasconditions during a verify operation for memory cell 472. Specifically,memory cells 464, 466, 468, and 470 are receiving Vrd1 at their controlgates and memory cells 474, 476 and 478 are receiving Vrd2 at theircontrol gates. Selected memory cell 472 receives Vcgv at its controlgate.

FIG. 16B depicts the case when there is an attempt to read memory cell472—the last memory cell programmed for that NAND string. In thisexample, memory cells 464, 466, 468, and 470 are receiving Vrd1 at theircontrol gates and memory cells 474, 476 and 478 are receiving Vrd2 attheir control gates. Selected memory cell 472 receives Vcgr at itscontrol gate.

FIG. 16C depicts the case when there is an attempt to read a memory cellthat has been programmed, but it was not the last memory cell for theNAND string to be programmed. In the example, of FIG. 16C, the lastmemory cell for the NAND string to be programmed is memory cell 472;however, memory cell 468 is selected for programming. Memory cell 468,therefore, received Vcgr at its control gate. Already programmed memorycells 464 and 466 on the source side of memory cell 468 receive Vrd1 attheir control gates. Already programmed memory cells 470 and 472 on thedrain side of memory cell 468 receive Vrd1 at their control gates. Notyet programmed memory cells 474, 476 and 478 on the drain side of memorycell 468 receive Vrd2 at their control gates. FIG. 16C depicts thatmemory cells that have been subjected to a programming process receiveVrd1 and those memory cells that have not been subjected to aprogramming process receive Vrd2. Thus, when word lines below the lastprogrammed word line are read, as depicted in FIG. 16C, the mostaccurate method is to use the bias of Vrd1 on the unselected word linesthat have been programmed already and to use a bias of Vrd2 on the stillun-programmed unselected word lines.

Although FIG. 16C shows two memory cells on the source side, one or morememory cells can be on the source side. Although FIG. 16C shows twomemory cells on the drain side receiving Vrd1, one or more memory cellscan be on the drain side and receive Vrd1. Similarly, one or more (or,two or more) memory cells can be on the drain side and receive Vrd2.

Although the above is the ideal operation, in practical situations thismay be complicated as one needs to know up to which word line a certainNAND string is being programmed. This requires extra intelligence and/ordata storage in controller circuits or in the NAND memory device itself.However, in most cases, using the conventional read operation whereVread is applied to all unselected word lines will be accurate enough.The result of using Vread instead of Vrd2 on the still un-programmedword lines will be that the actual IV characteristics of a certainmemory cell during the read operation will be shifted up to a certainextend in comparison with the IV characteristics during the verifyoperation. As a result, the threshold voltage of the selected memorywill appear to be slightly lower than during the verify operation. Ingeneral, a threshold voltage shift in a lower direction is not as bad asa shift in a higher direction. A threshold voltage shift upwards cancause so-called over-programming in which the threshold voltage of thememory cell crosses the read level of the next state. As a result, amemory cell that was intended to be programmed to the A-state could beincorrectly read as being a B-state cell. In case the cell shifts in thelower direction, no immediate fail will occur as there is alwayssufficient margin between the verify level and the read level for acertain state. This margin is usually used to ensure sufficient dataretention as the threshold voltage of programmed memory cells tends toshift in the lower direction over time. Besides that, the likelihoodthat NAND strings are partially programmed is not very high as usuallylarge data files are written and the NAND array is filled in asequential order nicely filling up NAND string after NAND string withdata.

The foregoing detailed description of the invention has been presentedfor purposes of illustration and description. It is not intended to beexhaustive or to limit the invention to the precise form disclosed. Manymodifications and variations are possible in light of the aboveteaching. The described embodiments were chosen in order to best explainthe principles of the invention and its practical application, tothereby enable others skilled in the art to best utilize the inventionin various embodiments and with various modifications as are suited tothe particular use contemplated. It is intended that the scope of theinvention be defined by the claims appended hereto.

1. A method for using non-volatile storage, comprising: programming aparticular non-volatile storage element of a group of connectednon-volatile storage elements, the programming of the particularnon-volatile storage element includes verifying the programming of theparticular non-volatile storage element; programming additionalnon-volatile storage elements of the group of connected non-volatilestorage elements after the programming of the particular non-volatilestorage element; and reading the particular non-volatile storage elementafter the programming of the additional non-volatile storage elements,the verifying of the programming of the particular non-volatile storageelement includes providing different pass voltages to other non-volatilestorage elements of the group and the reading of the particularnon-volatile storage element includes providing a common pass voltage tothe other non-volatile storage elements of the group.
 2. The method ofclaim 1, wherein: the providing different pass voltages to othernon-volatile storage elements of the group includes applying a firstvoltage to one or more non-volatile storage elements of the group thatare on a source side of the particular non-volatile storage element andapplying a second voltage to two or more non-volatile storage elementsof the group that are on a drain side of the particular non-volatilestorage element, the first voltage is different than the second voltage.3. The method of claim 2, wherein: the second voltage is lower than thefirst voltage.
 4. The method of claim 2, wherein: the providingdifferent pass voltages to other non-volatile storage elements of thegroup further includes applying a third voltage to a non-volatilestorage element that is a drain side neighbor of the particularnon-volatile storage element, the third voltage is different than thefirst voltage and the second voltage.
 5. The method of claim 2, wherein:the verifying includes applying a verify reference voltage.
 6. Themethod of claim 1, wherein the providing different pass voltages toother non-volatile storage elements of the group comprises: applying afirst voltage to one or more non-volatile storage elements of the groupthat have already been subjected to one or more programming processessince a last relevant erase; and applying a second voltage to two ormore non-volatile storage elements of the group that have not beensubjected to a programming process since the last relevant erase.
 7. Themethod of claim 6, wherein: the second voltage is lower than the firstvoltage.
 8. The method of claim 6, wherein: the providing different passvoltages to other non-volatile storage elements of the group furtherincludes applying a third voltage to a non-volatile storage element thatis partially programmed.
 9. The method of claim 6, wherein: theverifying includes applying a verify reference voltage.
 10. The methodof claim 1, wherein: the different pass voltages are sufficiently highenough to turn on the other non-volatile storage elements of the group.11. The method of claim 1, wherein: the group of connected non-volatilestorage elements comprise a NAND string.
 12. A method for usingnon-volatile storage, comprising: programming a particular non-volatilestorage element of a group of connected non-volatile storage elements,the programming of the particular non-volatile storage element includesverifying the programming of the particular non-volatile storageelement; programming additional non-volatile storage elements of thegroup of connected non-volatile storage elements after the programmingof the particular non-volatile storage element; and reading theparticular non-volatile storage element after the programming of theadditional non-volatile storage elements, the verifying of theprogramming of the particular non-volatile storage element includesproviding a first set of pass voltages to other non-volatile storageelements of the group and the reading of the particular non-volatilestorage element includes providing a second set of one or more passvoltages to the other non-volatile storage elements of the group, thefirst set of pass voltages is different than the second set of one ormore pass voltages.
 13. The method of claim 12, wherein: the providingthe first set of pass voltages to other non-volatile storage elements ofthe group includes applying a first voltage to one or more non-volatilestorage elements of the group that are on a source side of theparticular non-volatile storage element and applying a second voltage totwo or more non-volatile storage elements of the group that are on adrain side of the particular non-volatile storage element, the firstvoltage is different than the second voltage.
 14. The method of claim13, wherein: the second voltage is lower than the first voltage; and theverifying includes applying a verify reference voltage.
 15. The methodof claim 14, wherein: the providing the first set of pass voltages toother non-volatile storage elements of the group further includesapplying a third voltage to a non-volatile storage element that is adrain side neighbor of the particular non-volatile storage element, thethird voltage is different than the first voltage and the secondvoltage.
 16. The method of claim 12, wherein the providing the first setof pass voltages to other non-volatile storage elements of the groupcomprises: applying a first voltage to one or more non-volatile storageelements of the group that have already been subjected to one or moreprogramming processes since a last relevant erase; and applying a secondvoltage to two or more non-volatile storage elements of the group thathave not been subjected to a programming process since the last relevanterase.
 17. The method of claim 16, wherein: the second voltage is lowerthan the first voltage; and the verifying includes applying a verifyreference voltage.
 18. The method of claim 16, wherein: the providingthe first set of pass voltages to other non-volatile storage elements ofthe group further includes applying a third voltage to a non-volatilestorage element that is a drain side neighbor of the particularnon-volatile storage element, the third voltage is different than thefirst voltage and the second voltage.
 19. A non-volatile storage system,comprising: a group of connected non-volatile storage elements; and amanaging circuit in communication with the group of connectednon-volatile storage elements, the managing circuit programs aparticular non-volatile storage element of the group of connectednon-volatile storage elements, the programming of the particularnon-volatile storage element includes verifying the programming of theparticular non-volatile storage element, the managing circuit programsadditional non-volatile storage elements of the group of connectednon-volatile storage elements after the programming of the particularnon-volatile storage element, the managing circuit reads the particularnon-volatile storage element after the programming of the additionalnon-volatile storage elements, the verifying of the programming of theparticular non-volatile storage element includes the managing circuitproviding different pass voltages to other non-volatile storage elementsof the group and the managing circuit reads the particular non-volatilestorage element by providing a common pass voltage to the othernon-volatile storage elements of the group.
 20. The non-volatile storagesystem of claim 19, wherein: the providing different pass voltages toother non-volatile storage elements of the group includes the managingcircuit applying a first voltage to one or more non-volatile storageelements of the group that are on a source side of the particularnon-volatile storage element and the managing circuit applying a secondvoltage to two or more non-volatile storage elements of the group thatare on a drain side of the particular non-volatile storage element, thefirst voltage is different than the second voltage.
 21. The non-volatilestorage system of claim 20, wherein: while verifying, the managingcircuit applies a third voltage to a non-volatile storage element thatis a drain side neighbor of the particular non-volatile storage element,the third voltage is different than the first voltage and the secondvoltage.
 22. The non-volatile storage system of claim 19, wherein: theproviding different pass voltages to other non-volatile storage elementsof the group includes the managing circuit applying a first voltage toone or more non-volatile storage elements of the group that have alreadybeen subjected to one or more programming processes since a lastrelevant erase and applying a second voltage to two or more non-volatilestorage elements of the group that have not been subjected to aprogramming process since the last relevant erase.
 23. The non-volatilestorage system of claim 22, wherein: while verifying, the managingcircuit applies a third voltage to a non-volatile storage element thatis partially programmed, the third voltage is different than the firstvoltage and the second voltage.
 24. The non-volatile storage system ofclaim 19, wherein: the group of connected non-volatile storage elementscomprise a NAND string.
 25. A non-volatile storage system, comprising: agroup of connected non-volatile storage elements; and a managing circuitin communication with the group of connected non-volatile storageelements, the managing circuit programs a particular non-volatilestorage element of the group of connected non-volatile storage elements,the programming of the particular non-volatile storage element includesverifying the programming of the particular non-volatile storageelement, the managing circuit programs additional non-volatile storageelements of the group of connected non-volatile storage elements afterthe programming of the particular non-volatile storage element, themanaging circuit reads the particular non-volatile storage element afterthe programming of the additional non-volatile storage elements, theverifying of the programming of the particular non-volatile storageelement includes the managing circuit providing a first set of passvoltages to other non-volatile storage elements of the group, thereading of the particular non-volatile storage element includes themanaging circuit providing a second set of one or more pass voltages tothe other non-volatile storage elements of the group, the first set ofpass voltages is different than the second set of one or more passvoltages.
 26. The non-volatile storage system of claim 25, wherein: themanaging circuit provides the first set of pass voltages to othernon-volatile storage elements of the group by applying a first voltageto one or more non-volatile storage elements of the group that are on asource side of the particular non-volatile storage element and applyinga second voltage to two or more non-volatile storage elements of thegroup that are on a drain side of the particular non-volatile storageelement, the first voltage is different than the second voltage.
 27. Thenon-volatile storage system of claim 25, wherein: the managing circuitprovides the first set of pass voltages to other non-volatile storageelements of the group by applying a first voltage to one or morenon-volatile storage elements of the group that have already beensubjected to one or more programming processes since a last relevanterase and applying a second voltage to two or more non-volatile storageelements of the group that have not been subjected to a programmingprocess since the last relevant erase.
 28. The non-volatile storagesystem of claim 25, wherein: the managing circuit provides the first setof pass voltages to other non-volatile storage elements of the group byapplying a first voltage to one or more non-volatile storage elements ofthe group that have already been subjected to one or more programmingprocesses since a last relevant erase, applying a second voltage to twoor more non-volatile storage elements of the group that have not beensubjected to a programming process since the last relevant erase, andapplying a third voltage to a non-volatile storage elements of the groupthat has been partially programmed since the last relevant erase. 29.The non-volatile storage system of claim 25, wherein: the group ofconnected non-volatile storage elements comprise a NAND string.